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PD - 96130
IRF6714MPbF IRF6714MTRPBF
l l l l l l l l l l
RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 mm) 25V max 20V max 1.6m@ 10V 2.6m@ 4.5V Dual Sided Cooling Compatible Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Optimized for High Frequency Switching 29nC 8.3nC 4.1nC 36nC 23nC 1.9V Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested MX
DirectFET ISOMETRIC
Typical values (unless otherwise specified)
DirectFET Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MP
Description
The IRF6714MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
5
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
g
e e f
25 20 29 23 166 234 175 23
VGS, Gate-to-Source Voltage (V)
A
mJ A
14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
4 3 2 1 0 2 4 6 8 10 12 14 T J = 25C T J = 125C
ID = 29A
ID= 23A
VDS= 20V VDS= 13V
16
18
20
VGS, Gate -to -Source Voltage (V)
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.651mH, RG = 25, IAS = 23A.
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09/21/07
IRF6714MPbF
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
25 --- --- --- 1.4 --- --- --- --- --- 122 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 18 1.6 2.6 1.9 -6.5 --- --- --- --- --- 29 9.0 4.1 8.3 8.1 12 23 1.2 18 26 13 9.6 3890 1110 490 --- --- 2.1 3.4 2.4 --- 1.0 150 100 -100 --- 44 --- --- --- --- --- --- 2.2 --- --- --- --- --- --- --- nC
Conditions
VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 29A m VGS = 4.5V, ID = 23A V V mV/C A nA S
i i
VDS = VGS, ID = 100A VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 13V, ID = 23A VDS = 13V VGS = 4.5V ID = 23A See Fig. 15 VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5VAi
nC
ns
ID = 23A RG = 1.8, RD = 0.54 See Fig. 17 VGS = 0V
pF
VDS = 13V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ag Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 26 36 112 A 234 1.0 39 54 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 23A, VGS = 0V TJ = 25C, IF = 23A di/dt = 200A/s
i
i
Notes:
Pulse width 400s; duty cycle 2%
2
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IRF6714MPbF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
f
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
g dg eg fg
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.4 ---
Units
C/W
A
W/C
100 D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 A 2 3 4 4 A
Thermal Response ( Z thJA )
10
1
Ri (C/W)
1.3634 7.8361 19.8534 15.9581
i (sec)
0.000202 0.096325 1.3861 51
0.1
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 0.1 1 10 100 1000
0.001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6714MPbF
1000
TOP VGS 10.0V 5.00V 4.50V 4.00V 3.50V 3.25V 3.00V 2.75V
1000
TOP VGS 10.0V 5.00V 4.50V 4.00V 3.50V 3.25V 3.00V 2.75V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1 2.75V
10 2.75V
0.1
60s PULSE WIDTH
Tj = 25C 0.01 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH
Tj = 150C 1 0.1 1 10 100 1000 V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C T J = 25C T J = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
2.0 ID = 29A
ID, Drain-to-Source Current (A)
1.5 V GS = 10V V GS = 4.5V 1.0
10
1
0.1 1 2 3 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
20 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V T J = 25C
10000 Ciss Coss 1000 Crss
Typical RDS(on) ( m)
C oss = C ds + C gd
16
C, Capacitance(pF)
12
8
4
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0 0 50 100 150 200
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6714MPbF
1000 1000
OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec
ISD, Reverse Drain Current (A)
100
T J = 150C T J = 25C T J = -40C
ID, Drain-to-Source Current (A)
100
10
1msec
10
1
DC 10msec
1 VGS = 0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
0.1
T A = 25C T J = 150C Single Pulse
0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
3.5 3.0 2.5 2.0 ID = 100A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) ID = 1.0mA ID = 1.0A ID = 250A
180 160 140
ID, Drain Current (A)
120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 12. Maximum Drain Current vs. Case Temperature
800
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 2.43A 3.22A BOTTOM 23.0A TOP
EAS , Single Pulse Avalanche Energy (mJ)
700 600 500 400 300 200 100 0 25 50 75
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6714MPbF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS tp
+ - VDD
A
20V
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
VDS 90%
D.U.T.
+
- V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6714MPbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
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IRF6714MPbF
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIM EN SION S
METRIC CO DE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 1.38 0.80 0.38 0.88 2.28 0.616 0.020 0.08 M AX 6.35 5.05 3.95 0.45 0.72 0.72 1.42 0.84 0.42 1.01 2.41 0.676 0.080 0.17 IMPE RIAL M IN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 M AX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007
DirectFET Part Marking
GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE
Line above the last character of the date code indicates "Lead-Free"
8
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IRF6714MPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6714MTRPBF). For 1000 parts on 7" reel, order IRF6714MTR1PBF STANDARD OPTION METRIC CODE MIN MAX A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION IMPERIAL METRIC MIN MAX MAX MIN 12.992 N.C 177.77 N.C 0.795 N.C 19.06 N.C 0.504 0.520 13.5 12.8 0.059 1.5 N.C N.C 3.937 N.C 58.72 N.C N.C N.C 13.50 0.724 0.488 11.9 12.01 0.567 0.469 11.9 0.606 12.01 (QTY 1000) IMPERIAL MAX MIN N.C 6.9 N.C 0.75 0.53 0.50 0.059 N.C 2.31 N.C N.C 0.53 0.47 N.C 0.47 N.C
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 0.319 8.10 7.90 0.154 0.161 3.90 4.10 0.484 0.469 12.30 11.90 0.215 0.219 5.55 5.45 0.209 0.201 5.30 5.10 0.256 0.264 6.70 6.50 0.059 N.C 1.50 N.C 0.059 0.063 1.60 1.50
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2007
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